International GaN Workshop at Schloss Ringberg

January 20 - 24 1998

 


Surface Morphology, Interfaces and Growth of the III-Nitrides

Organized By:

J. Neugebauer1, M. Scheffler1 and B. Meyer2

1 Fritz-Haber-Institut der Max-Plack-Gesellschaft

2 University of Giessen


List of Contents:

1. Scope of the Workshop

2. List of Invited Speakers

3. Program (Preliminary)

4. Information about Schloss Ringberg

5. Submission of Abstracts

6. Registration

7. Financial Support

8. Sponsors


1. Scope of the Workshop

 

Despite progress in fabricating GaN based devices, achieving insight into the fundamental growth mechanisms of GaN is still in its infancy. Even basic properties of surfaces, surface diffusion, and interfaces such as stoichiometry, atomic geometry, and band structure are not well understood. A deeper knowledge of these mechanisms is crucial to improve growth in a systematic way, thereby enabling low background carrier concentrations and dislocation densities to be obtained.

The objective of this international workshop is to provide a forum for nitride researchers to exchange their knowledge by presenting their latest results. The workshop is limited to 60 participants enabling in-depth technical discussions. The focus will be on latest experimental and theoretical results concerning the properties of surfaces, internal and external interfaces, and growth with particular emphasize on atomic scale processes.

The workshop will begin on Tuesday, January 22 at 6 p.m. and will end on Saturday after breakfast.

 

Topics:

  • Surfaces

atomic and electronic structure, characterization, simulation, adatom diffusion on surfaces

internal interfaces and dislocations, substrate-nitride interface, contacts, valence-band offsets, electronic interface states, atomic structure

growth techniques (MOCVD, HVPE, MBE, ...), precursors, role of buffer layer, strategies to optimize growth


2. List of Invited Speakers

Surfaces:

F. Bechstedt (Jena, Germany)

Chemical Trends in Surface Properties of III-Nitrides

J. Bernholc (Raleigh, USA)

Theory of Surfaces, Adsorbates, Heterostructures, Defects and Ordering in Nitride Semiconductors

O. Brandt (Berlin, Germany)

Surfaces and Interfaces in the GaN/GaAs Materials System

G. Feuillet (Grenoble, France)

Surface Reconstructions and 2D/3D Growth Processes for Nitride Semiconductors

J. E. Northrup (Palo Alto, USA)

Structure, Energetics, and Electronic Properties of GaN and AlN Surfaces

A.R. Smith (Pittsburgh, USA)

Surface Reconstructions of Wurtzite GaN Studied by Scanning Tunneling Microscopy

T. Zywietz (Berlin, Germany)

Surfaces, Surfactants, and Diffusion at Cubic and Hexagonal GaN

Interfaces:

V. Fiorentini (Cagliari, Italy)

Polarization, Offsets, and Device Design of III-N Nanostructures

H. Lüth (Jülich, Germany)

Valence Band Offsets at SiC/AlN/GaN Heterojunctions

W. Mönch (Duisburg, Germany)

Electronic Properties of Metals on Group-III Nitrides: Three Examples

P. Vogl (München, Germany)

Energetics and Atomic Structure of the SiC/GaN, SiC/AlN Interfaces

C. G. Van de Walle (Palo Alto, USA)

Interfaces and Band Offsets in III-Nitrides

Growth:

H. Amano (Tokyo, Japan)

In situ Observation of the Crystallization Process of the Low Temperature Deposited Buffer Layer on Sapphire

T. Fraunheim (Chemnitz, Germany)

Ab initio Selfconsistent-Charge Tight-Binding: Applications to III-V Semiconductor Surfaces and Dislocations

D. Hommel (Bremen, Germany)

Comparison of Structural and Electrical Properties of GaN Layers Grown with ECR- and rf-Plasma Sources

M. Kamp (Ulm, Germany)

Growth Kinetics of Group III-Nitrides Using Ammonia in MBE

H. Lakner (Duisburg, Germany)

Nanostructure and Spatially Resolved Electro-Optical Properties of Group III-Nitride Quantum Wells

B. Meyer (Giessen, Germany)

Low Presure CVD Growth of GaN - Structural, Optical and Electrical Properties

H. Riechert (München, Germany)

MBE Growth of GaN

J. Speck (Santa Barbara, USA)

Defect Generation and Morphological Evolution in GaN Heteroepitaxy

O. Ambacher (München, Germany)

Consequences of the Special Physical and Chemical Properties on the Growth of Group-III Nitride Heterostructures by MBE and MOCVD

H. Obloh (Freiburg, Germany)

Issues of Growth, Morphology and Interface-Abruptness of III-Nitride Heterostructures Grown by MOCVD

T. Suski (Warsaw, Poland)

Role of High Pressure in GaN Crystal Growth, Activation of Impurities and Defect Annihilation

E. Weber (Berkeley, USA)

Thin film Growth of GaN: The Role of Strain, Stoichiometry and Doping

 


3. Program

 

Tuesday, Jan. 20 (Opening)

15:00 - 18:00

Registration

18:30 - 20:00

Dinner

20:00 - 20:15

Opening (J. Neugebauer, B. Meyer, M. Scheffler)

 

Chair: J. Pollmann

20:15 - 21:00

A.R. Smith (Pittsburgh, USA)

Surface reconstructions of wurtzite GaN studied by scanning tunneling microscopy

21:00 - 21:45

J. E. Northrup (Palo Alto, USA)

Structure, energetics, and electronic properties of GaN and AlN surfaces

21:45

Welcome Party (sponsored by AIXTRON AG)

 

Wednesday, Jan. 21 (Surfaces)

8:00 - 9:00

Breakfast

Chair: P. Boguslawski

9:00 - 9:45

G. Feuillet (Grenoble, France)

Surface reconstructions and 2D/3D growth processes for nitride semiconductors

9:45 - 10:30

T. Zywietz (Berlin)

Surfaces, Surfactants and Diffusion at Cubic and Hexagonal GaN

10:30 - 11:00

Coffee break

Chair: M. Scheffler

11:00 - 11:45

F. Bechstedt (Jena)

Chemical trends in surface properties of III-nitrides

11:45 - 12:30

J. Bernholc (Raleigh, USA)

Theory of Surfaces, Adsorbates, Heterostructures, Defects and Ordering in Nitride Semiconductors

12:30

Lunch

14:00

Guided tour through the castle

 

15:00 - 17:00

Poster Session I

 

Chair: D. Bimberg

17:00 - 17:45

O. Brandt (Berlin)

Surfaces and interfaces in the GaN/GaAs materials system

17:45 - 18:30

H. Lüth (Juelich)

Valence Band Offsets at SiC/AlN/GaN Heterojunctions

18:30 - 20:00

Dinner

20:00 -

Rump Session (J. Neugebauer)

Properties and morphology of surfaces and interfaces

 

Thursday, Jan. 22 (Interfaces)

8:00 - 9:00

Breakfast

Chair: K. Horn

9:00 - 9:45

H. Lakner (Duisburg)

Nanostructure and spatially resolved electro-optical properties of group III-nitride quantum wells

9:45 - 10:30

T. Fraunheim (Chemnitz)

Ab initio selfconsistent-charge tight-binding: applications to III-V semiconductor surfaces and interfaces

10:30 - 11:00

Coffee break

Chair: A. Rizzi

11:00 - 11:45

W. Mönch (Duisburg)

Electronic properties of metals on group-III nitrides: Three examples

11:45 - 12:30

C. G. Van de Walle (Palo Alto, USA)

Interfaces and band offsets in III-nitrides

12:30

Lunch

14:00

Walk through the winter forest

 

16:00 - 17:00

Poster Session II

 

Chair: R. Nieminen

17:00 - 17:45

V. Fiorentini (Cagliari, Italy)

Polarization, Offsets, and Device Design of III-N Nanostructures

17:45 - 18:30

P. Vogl (München)

Energetics and Atomic Structure of the SiC/GaN, SiC/AlN Interfaces

18:30 - 20:00

Dinner

20:00 -

Concert

 

Friday, Jan. 23 (Growth)

8:00 - 9:00

Breakfast

Chair: J. Neugebauer

9:00 - 9:45

H. Amano (Nagoya, Japan)

In situ observation of the crystallization process of the low temperature deposited buffer layer on sapphire

9:45 - 10:30

D. Hommel (Bremen)

Comparison of structural and electrical properties of GaN layers grown with ECR- and rf-plasma sources

10:30 - 11:00

Coffee break

Chair: A. Krost

11:00 - 11:45

J. Speck (Santa Barbara, USA)

Defect generation and morphological evolution in GaN heteroepitaxy

11:45 - 12:30

B. Meyer (Giessen)

Low pressure CVD growth of GaN - structural, optical and electrical properties

12:30

Lunch

Chair: J. Christen

14:15 - 15:00

H. Obloh

Issues of growth, morphology and interface-abruptness of III-Nitride heterostructures grown by MOCVD

15:00 - 15:45

H. Riechert (München)

MBE Growth of GaN

Chair: D. As

15:45 - 16:30

T. Suski (Warsaw, Poland)

Role of high pressure in GaN crystal growth, activation of impurities and defect annihilation

16:30 - 17:00

Coffee break

Chair: B. Meyer

17:00 - 17:45

O. Ambacher (München)

Consequences of the special physical and chemical properties on the growth of group-III nitride heterostructures by MBE and MOCVD

17:45 - 18:30

M. Kamp (Ulm)

Growth kinetics of group III nitrides using ammonia in MBE

18:30 - 20:00

Dinner

20:00 - 20:45

E. Weber (Berkeley, USA)

Thin film growth of GaN: the role of strain, stoichiometry and doping

20:45 -

Rump Session (M. Kamp, H. Riechert, J. Speck)

Growth Techniques and Mechanisms

 

Saturday, Jan. 24 (Departure)

8:00 - 9:00

Breakfast

9:00

Check Out and Departure

 

 


4. Information about Schloss Ringberg

 

Schloss Ringberg

D-83700 Rottach-Egern

Germany

 

The weather in January is typically quite cold (average between -5 and 5 C, 55 - 65 F) with occasional snowfall. Be prepared for winter like weather.

General Information

How to get to Ringberg Castle


5. Submission of Abstracts

Abstract Deadline: October 31, 1997

 

  1. Authors are requested to electronically submit a one-page abstract including figures and tables.
  2. Abstracts must be in Microsoft Word or Latex format (A4 or B4, leave 2 cm margins on the sides and 2.5 cm margins at the top and bottom).
  3. The title should be placed at the top of the abstract, followed by the author(s) name(s), affiliation(s), address, telephone number, fax number, and e-mail address.
  4. The abstracts will be distributed at the meeting.
  5.  Please send the abstracts to the following address:

    zywietz@fhi-berlin.mpg.de

  6. You will be informed by e-mail about acceptance of your abstract until November 15.
  7. There will be no conference proceedings.


6. Registration

Registration Deadline: November 30, 1997

There will be no registration fee. The cost for full board and lodging will be 500 DM. This includes the room rate for four nights, breakfast, lunch and dinner. Please note that we cannot accept credit cards! On Tuesday, January 20, there will be dinner only. On Saturday, January 24, breakfast will be served.

To register, please send an e-mail with your name, affiliation and arrival time to:

zywietz@fhi-berlin.mpg.de


7. Financial Support

For young scientists presenting a contributed talk or poster there may be financial support covering the costs for full board and lodging.

 


8. Sponsors

The workshop will be sponsored by the Deutsche Forschungsgemeinschaft (DFG) and the Max-Plack-Gesellschaft (MPG). The social program will be sponsored by the AIXTRON AG (http://www.aixtron.com/).

 

 

 


This Page is maintained by: Tosja Zywietz

Last update: January 13, 1998